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Freescale Semiconductor Technical Data
Document Number: MRF6S19100H Rev. 5, 12/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 22 Watts Avg., f = 1987 MHz, IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 16.1 dB Drain Efficiency -- 28% IM3 @ 2.5 MHz Offset -- - 37 dBc in 1.2288 MHz Channel Bandwidth ACPR @ 885 kHz Offset -- - 51 dBc in 30 kHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S19100HR3 MRF6S19100HSR3
1930- 1990 MHz, 22 W AVG., 28 V 2 x N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465 - 06, STYLE 1 NI - 780 MRF6S19100HR3
CASE 465A - 06, STYLE 1 NI - 780S MRF6S19100HSR3
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature
(1,2)
Symbol VDSS VGS Tstg TC TJ
Value - 0.5, +68 - 0.5, +12 - 65 to +150 150 225
Unit Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 100 W CW Case Temperature 77C, 22 W CW Symbol RJC Value (2,3) 0.44 0.50 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2004 - 2006, 2008. All rights reserved.
MRF6S19100HR3 MRF6S19100HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 3A (Minimum) B (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 250 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 900 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.2 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 1.5 -- pF VGS(th) VGS(Q) VDS(on) 1 2 0.1 2 2.8 0.21 3 4 0.3 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 900 mA, Pout = 22 W Avg., f = 1987 MHz, 2 - carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ 885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ 2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. Gps D IM3 ACPR IRL 15 26 -- -- -- 16.1 28 - 37 - 51 - 15 18 -- - 35 - 48 -9 dB % dBc dBc dB
MRF6S19100HR3 MRF6S19100HSR3 2 RF Device Data Freescale Semiconductor
+ B1 VBIAS R2 RF INPUT + C5 Z3 C3 C1 C2 DUT Z4 R1 C4 Z5 Z6 Z7 Z8 Z9 C7 C8
+ C9
+ C10 C11 Z10 C6
+ C12 Z11
VSUPPLY
RF OUTPUT
Z1
Z2
Z1 Z2 Z3 Z4 Z5 Z6
0.130 x 0.084 Microstrip 0.360 x 0.084 Microstrip 0.260 x 0.084 Microstrip 0.950 x 0.084 Microstrip 0.457 x 0.940 Microstrip 0.083 x 0.940 Microstrip
Z7 Z8 Z9 Z10 Z11 PCB
0.091 x 0.900 Microstrip 0.493 x 0.900 Microstrip 0.440 x 0.195 Microstrip 0.470 x 0.084 Microstrip 0.735 x 0.084 Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030, r = 2.55
Figure 1. MRF6S19100HR3(HSR3) Test Circuit Schematic
Table 5. MRF6S19100HR3(HSR3) Test Circuit Component Designations and Values
Part B1 C1, C2 C3 C4, C7 C5 C6 C8, C10 C9 C11 C12 R1 R2 RF Bead 0.6 - 4.5 pF Variable Capacitors, Gigatronics 15 pF Chip Capacitor 5.6 pF Chip Capacitors 1 F, 50 V Tantalum Chip Capacitor 43 pF Chip Capacitor 22 F, 35 V Tantalum Chip Capacitors 10 F, 35 V Tantalum Chip Capacitor 0.1 F Chip Capacitor 100 F, 50 V Electrolytic Capacitor 12 , 1/4 W Chip Resistor 2 kW, 1/4 W Chip Resistor Description Part Number 2743019447 27271SL ATC100B150CT500XT ATC100B5R6JT500XT T491C105K050AT ATC100B430CT500XT T491X226K035AT T491C106K035AT C1825C14J5RAC MCHT101M1HB- 1017 - RH CRCW120612R0FKEA CRCW12062001FKEA Manufacturer Fair - Rite Johanson Dielectrics ATC ATC Kemet ATC Kemet Kemet Kemet Multicomp Vishay Vishay
MRF6S19100HR3 MRF6S19100HSR3 RF Device Data Freescale Semiconductor 3
C8 C9 B1 VGG R1 C12
R2 C5 C4
C7
C1 1 C10
+ VDD -
C1
C2
C3
C6
CUT OUT AREA
MRF6S19100H/HS Rev 2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. MRF6S19100HR3(HSR3) Test Circuit Component Layout
MRF6S19100HR3 MRF6S19100HSR3 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) 16.6 16.4 Gps, POWER GAIN (dB) Gps 16.2 16 15.8 IRL 15.6 ACPR 1940 1950 1960 1970 1980 IM3 VDD = 28 Vdc, Pout = 22 W (Avg.), IDQ = 900 mA 2-Carrier N-CDMA, 2.5 MHz Carrier Spacing 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) 25 -35 -41 -47 -53 1990 D 29 27
IM3 (dBc), ACPR (dBc)
-5 -10 -15 -20
15.4 1930
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance @ Pout = 22 Watts Avg.
16.2 D 16 Gps, POWER GAIN (dB) 15.8 15.6 15.4 15.2 15 14.8 1930 IRL ACPR Gps VDD = 28 Vdc, Pout = 44 W (Avg.), IDQ = 900 mA 2-Carrier N-CDMA, 2.5 MHz Carrier Spacing 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) 40 38 -25 -30 -35 -40 -45 1990 IM3 (dBc), ACPR (dBc) -5 -10 -15 -20 42
D, DRAIN EFFICIENCY (%)
IM3
1940
1950
1960
1970
1980
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier N - CDMA Broadband Performance @ Pout = 44 Watts Avg.
18 IDQ = 1300 mA 17 Gps, POWER GAIN (dB) 1125 mA 16 900 mA 675 mA 450 mA 14 VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz Two-Tone Measurements, 2.5 MHz Tone Spacing 13 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 300 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) -15 -20 -25 -30 IDQ = 450 mA -35 -40 -45 -50 -55 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 300 900 mA 1125 mA 1300 mA 675 mA VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz Two-Tone Measurements, 2.5 MHz Tone Spacing
15
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF6S19100HR3 MRF6S19100HSR3 RF Device Data Freescale Semiconductor 5
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc) 0 -10 -20 -30 -40 -50 -60 0.1 VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 900 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz 56 55 Pout, OUTPUT POWER (dBm) 54 53 52 51 50 49 48 47 1 10 100 46 30 31 32 33 34 VDD = 28 Vdc, IDQ = 900 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 1960 MHz 35 36 37 38 39 P1dB = 50.9 dBm (124.2 W) Actual P3dB = 51.56 dBm (143.2 W) Ideal
3rd Order 5th Order 7th Order
40
TWO-TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products versus Tone Spacing
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 60 50 40 30 20 10 0 4 10
Figure 8. Pulsed CW Output Power versus Input Power
-10 -20 -30 ACPR -40 -50 Gps -60 -70 200 IM3 (dBc), ACPR (dBc)
VDD = 28 Vdc, IDQ = 900 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 2-Carrier N-CDMA, 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF)
D IM3
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. 2 - Carrier N - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power
17 Gps 16 Gps, POWER GAIN (dB) 15 14 13 12 D 11 10 3 10 Pout, OUTPUT POWER (WATTS) CW 100 VDD = 28 Vdc IDQ = 900 mA f = 1960 MHz 60 D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 50 40 30 20 10 0 200 70 18 16.5 15 13.5 12 10.5 9 7.5 6 0 25 50 75 100 125 150 175 200 Pout, OUTPUT POWER (WATTS) CW IDQ = 900 mA f = 1960 MHz 28 V 24 V VDD = 32 V
Figure 10. Power Gain and Drain Efficiency versus CW Output Power
Figure 11. Power Gain versus Output Power
MRF6S19100HR3 MRF6S19100HSR3 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
108
MTTF (HOURS)
107
106
105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 22 W Avg., and D = 28%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 12. MTTF Factor versus Junction Temperature
N - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ 885 kHz Offset. IM3 Measured in 1.2288 MHz Bandwidth @ 2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. (dB) 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -7.5 -6 -4.5 -3 -1.5 0 1.5 3 4.5 6 7.5 -ACPR in 30 kHz Integrated BW +ACPR in 30 kHz Integrated BW -IM3 in 1.2288 MHz Integrated BW +IM3 in 1.2288 MHz Integrated BW 1.2288 MHz Channel BW
Figure 13. 2 - Carrier CCDF N - CDMA
f, FREQUENCY (MHz)
Figure 14. 2 - Carrier N - CDMA Spectrum
MRF6S19100HR3 MRF6S19100HSR3 RF Device Data Freescale Semiconductor 7
f = 1990 MHz Zload f = 1930 MHz f = 1990 MHz Zsource f = 1930 MHz
Zo = 5
VDD = 28 Vdc, IDQ = 900 mA, Pout = 22 W Avg. f MHz 1930 1960 1990 Zsource 1.57 - j3.50 1.83 - j3.29 2.34 - j3.71 Zload 2.26 - j2.31 2.22 - j2.13 2.14 - j2.00
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S19100HR3 MRF6S19100HSR3 8 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
B G
1 2X
Q bbb
M
TA
M
B
M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF
3 (FLANGE)
B
2
K
D bbb
M
TA
M
B
M
M
(INSULATOR)
R
M
(LID)
bbb N H
(LID)
M
TA
B
M
ccc
M
TA
M
B
M
S
M
(INSULATOR)
ccc C
TA
M
B
M
aaa
M
TA
M
B
M
F E A
(FLANGE)
A
T
SEATING PLANE
CASE 465 - 06 ISSUE G NI - 780 MRF6S19100HR3
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
4X U (FLANGE)
B
1
4X Z (LID)
(FLANGE)
B
2
2X
K
D bbb
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF
TA
M
B
M
N
(LID)
R
M
(LID)
ccc M H
3
TA
M
B
M
ccc aaa
M
TA TA
M
B B
M
(INSULATOR)
S
M
(INSULATOR) M
bbb C
M
TA
B
M
M
M
F T
SEATING PLANE
E A
(FLANGE)
A
CASE 465A - 06 ISSUE H NI - 780S MRF6S19100HSR3
STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE
MRF6S19100HR3 MRF6S19100HSR3 RF Device Data Freescale Semiconductor 9
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 5 Date Dec. 2008 Description * Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13232, p. 1, 2 * Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality is standard, p. 1 * Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 * Operating Junction Temperature increased from 200C to 225C in Maximum Ratings table, related "Continuous use at maximum temperature will affect MTTF" footnote added, p. 1 * Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added "Measured in Functional Test", On Characteristics table, p. 2 * Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 * Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3 * Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers, p. 3 * Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 6 * Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 * Added Product Documentation and Revision History, p. 10
MRF6S19100HR3 MRF6S19100HSR3 10 RF Device Data Freescale Semiconductor
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MRF6S19100HR3 MRF6S19100HSR3
Document Number: RF Device Data MRF6S19100H Rev. 5, 12/2008 Freescale Semiconductor
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